 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS Field Effect Power Transistors PA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications of note book computers, and Li-ion battery applications. 8 5 1,2,3 ; Source 4 ; Gate 5,6,7,8 ; Drain PACKAGE DIMENSIONS (in millimeter) FEATURES * 2.5 V Gate Drive and Low On-Resistance RDS(on)1 = 27 m Max. (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 m Max. (VGS = 2.5 V, ID = 3.5 A) * Low Ciss Ciss = 1200 pF Typ. 1 4 5.37 Max 6.0 - 0.3 4.4 0.8 * Built-in G-S Protection Diode (Power SOP8) 1.8 Max 1.44 * Small and Surface Mount Package 0.15 _0.05 +0.10 0.05 Min 0.5 - 0.2 1.27 0.78 Max 0.12 M 0.10 +0.10 0.40 _0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, All terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Ta = 25 C)** Channel Temperature Storage Temperature * PW 10 s, Duty Cycle 1 % ** Mounted on ceramic substrate of 1200 mm2 x 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 12 7.0 28 2.0 150 -55 ~ +150 V V A A W C C Gate Protection Diode Source Gate Body Diode Drain The information in this document is subject to change without notice. Document No. G10929EJ2V0DS00 (2nd edition) Date Published April 1996 P Printed in Japan (c) 1995 PA 1 7 0 1 ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected) CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 4.0 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 20 V, VGS = 0 VGS = 12 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 3.5 A VGS(on) = 4.0 V VDD = 10 V RG = 10 ID = 7.0 A VDD = 16 V VGS = 4.0 V IF = 7.0 A, VGS = 0 IF = 7.0 A, VGS = 0 di/dt = 100 A/s 1200 710 350 30 170 200 160 32 2.5 16 0.8 60 90 0.5 6.0 MIN. TYP. 19 27 0.8 14 10 10 MAX. 27 40 1.5 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit Gate Charge D.U.T. RL VGS PG. RG RG = 10W Wave Form VGS 10 % VGS (on) 90 % D.U.T. IG = 2 mA RL 0 VDD ID 90 % 90 % ID ID Wave Form PG. 50 W VDD VGS 0 t 0 10 % 10 % td (on) tr td (off) tf ton t = 1 ms Duty Cycle 1 % toff 2 PA 1 7 0 1 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 PT - Total Power Dissipation - W Mounted on ceramic substrate of 1200 mm2 * 0.7 mm 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 12 V 20 ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 100 d ite ) mV Li 10 )= on S( GS RD t V (a ID(pulse) ID - Drain Current - A 10 ID(DC) Po we Mounted on ceramic substrate of 1200 mm2 * 0.7 mm PW = 1 m s 10 Pulsed VGS = 4 V VGS = 2.5 V VGS = 10 V 16 12 8 4 m 10 s 0 m rD s 1 iss ipa DC tio n Lim 0.1 0.1 TA = 25C Single Pulse ite d 1 10 100 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed ID - Drain Current - A 10 TA = 125C 25C -25C 1 0.1 VDS = 10 V 0 1.0 2.0 3.0 4.0 VGS - Gate to Source Voltage - V 3 PA 1 7 0 1 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance -C/W Rth(ch-a) = 62.5 C/W 100 10 1 0.1 0.01 0.001 10 100 1m 10 m 100 m 1 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m Mounted on ceramic substrate of 1200 mm 2x 0.7 mm Single Pulse 10 100 1 000 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT yfs - Forward Transfer Admittance - S 100 TA = - 25 C 25 C 75 C 125 C VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 10 40 1 20 ID = 3.5 A 0 5 10 15 0.1 0.1 1 10 100 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V 80 Pulsed 1.6 VDS = 10 V ID = 1 mA 60 VGS = 2.5 V 40 1.2 0.8 20 VGS = 4 V VGS = 10 V 0.4 0 0 - 50 1 10 ID - Drain Current - A 100 0 50 100 150 TCH - Channel Temperature -C 4 PA 1 7 0 1 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A 40 VGS = 2.5 V VGS = 4 V 30 VGS = 10 V 20 100 VGS = 10 V 10 VGS = 2.5 V VGS = 0 1 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 10 ID = 3.5 A - 50 0 50 100 150 0.1 0 0.5 1.0 1.5 0 TCH - Channel Temperature -C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns tr tf td(off) 100 td(on) 10 000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz 1 000 Ciss Coss Crss 100 10 10 0.1 1 10 100 VDS - Drain to Source Voltage - V 1 0.1 1 VDD =10 V VGS(on) = 4 V RG = 10 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V 30 VGS 20 VDD = 16 V 10 V 5V 12 10 8 6 4 2 VDS 100 10 10 1 0.1 1 10 100 0 16 32 ID - Drain Current - A 48 64 0 Qg - Gate Charge - nC 5 VGS - Gate to Source Voltage - V di/dt = 100 A/ s VGS = 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 40 ID = 7.0 A 14 PA 1 7 0 1 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037 6 PA 1 7 0 1 [MEMO] 7 PA 1 7 0 1 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of UPA1701
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |